KY MultiScale Research Highlights
MEMS MEmory Element for RAD-HArd Memory
This MEMS memory element is using a bistable clamped-clamped beam for applications that require rad-hard memory. Most memory technology is based on the storage of electrical charge, including DRAM and Flash memory. The amount of charge on a bit is easily disrupted from ionizing radiation. For rad-hard applications, a mechanical element is desired for which ionizing radiation will not affect the bit value. The bit is stored using a clamped-clamped silicon beam that is oxidized to provide compressive strain. This compressive strain causes the beam to buckle along its length. Since the beam can buckle in one of two stable states, a memory element can be formed. Reading the bit is performed by observing the resistance change in an asymmetric piezoresistor at either end of the beam. Writing the bit is performed electrostatically by applying a voltage to an electrode on either side of the beam.
Feature 2
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Feature 3
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